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AP-Smart Inline
Semiconductor Packaging Intelligent Inline Solution
  • High Precision

    • ±7μm Placement

    • Cpk ≥ 1.67

    • 0 Defect for Automotive Application

  • High Stability

    • Vibration Suppression Technology

    • Real-Time Correction Technology

    • Years of Stable & Reliable HVM

  • High Speed

    • +20% High Throughput

    • Enhanced Overall OEE

  • High Intelligence

    • MES Traceability

    • Unmanned Automation Line

    • Automotive COB Process

Item Specifications
End Market Consumer / Automotive
Application Smartphone / Automotive CMOS Modules, LiDAR Modules
Material Handling 4~12" Wafer, JEDEC Tray, Waffle Pack etc.
Process COB, BGA, DAF
Die Placement XY: ≤±7μm@3σ; θ: ≤±0.1°@3σ
UPH ≥2200 (Smartphone COB, ≥36 pcs / Strip); ≥1000 (Automotive COB, ≥18 pcs / Strip)
Footprint & Weight Configuration Dependent
Note: Specs may vary by material and configuration
AP-M2000 Series
Ultra-Thin-Die SiP Die Bonder
  • ±5μm

    Placement

  • 25μm

    Thin Die

  • 32-Hi

    Stacking

  • 100

    Class

  • High Precision

    • ±5μm Placement

    • Friction-Free Precise Force Control

    • Vibration Suppression

  • High Stability

    • 25μm Die Thickness

    • 32-Hi

    • Key OSAT / IDM Running HVM

  • High Speed

    • Leading UPH & OEE

    • Compatible with All DRAM & Flash Processes

    • Support DAF & Epoxy

  • High Intelligence

    • Patented Crack-Free Technology

    • Deep Learning AOI

    • Support Industry 4.0

Item Specifications
Wafer 6"~12"
Die Size 0.8~25mm
Die Thickness ≥25μm
Bond Force 0.5~50N (70N Optional)
Die Placement ±5μm@3σ
Process DAF & Epoxy
UPH Material Dependent
Item Specifications
Strip Length 130~300mm
Strip Width 55~100mm (Optional <55mm)
Heater Block Max 250°C (±5°C)
Die Stacking YES
Packages BGA / QFP / QFN etc.
Footprint (mm) 2292x1551x1900 (LxDxH)
Weight 2450kg
Note: Specs may vary by material and configuration
AP-M3500 Series
Multi-Chip SiP Die Bonder
  • ±3μm

    Placement

  • AMHS

    Industry 4.0

  • High Flexibility

    Multi-chip Mounting

  • High Intelligence

    Material Traceability; Self-Diagnosis

  • High Precision

    • XY Placement: ±3μm@3σ

    • Theta Rotation: 0.07°@3σ

    • Force Control: 0.1-10N±10%

    • Precise BLT Control

  • High Speed

    • Industry-Leading UPH

    • Extremely User-Friendly

    • High Speed Mode with ±10μm Placement

  • High Flexibility

    • Easy Process Changing

    • Easy Product Conversion

    • Auto Tool Changing

  • High Intelligence

    • Support SECS / GEM, Inline, OHT, AGV

    • Post-Disp / Bond Smart Inspection

    • FM / Crack Detection

    • Self-Diagnosis

Item Specifications
Application Photonics, Transceiver, SiP, LIDAR, Camera Module, etc.
Die Size 0.15-25mm
Die Thickness 0.025-7.0mm
Bond Force 0.1-10N±10%
Die Placement ±3μm@3σ
Attach Process COB, FC, DA with Epoxy / Silver Paste / UV Glue
Item Specifications
Substrate L: 130-260mm x W: 55-140mm
Material Handling FR4, Leadframe, Strips, Carrier, Boat, Ceramics, 6"-12"Wafer, Gel-pak, Waffle Pack, Tray, Feeder
Bondhead 6 Collets Auto Changing, Heating, UV, Confocal Height Measurement
Ejector System 5 sets Auto Changing
Footprint(mm) 1240x1553x2060 (LxDxH)
Note: Specs may vary by material and configuration
VULCAN PRO
Thermo-Compression Bonder
  • ±2μm

    Placement

  • 500+

    UPH

  • 16Hi+

    Stacking

  • 100

    Class

  • High Precision
    HIGH PRECISION

    • Placement Accuracy: TC ±2μm@3σ

    • Tilt Control: ≤2μm@10mm

    • Compatible for TC-MUF, MR-MUF and FC Processes

  • High Throughput
    HIGH THROUGHPUT

    • Single TCB UPH > 500, Dual TCB UPH > 1000 with 4s Bond Time

    • Fast Device Conversion in 4 hours

    • EFEM with Multi-loadports

  • Fluxless
    Fluxless

    • Low Temperature Atmospheric Plasma to Remove Metal Oxide

    • Wafer-level / Chip-level Plasma Treatment (Both Sides)

    • N2 Shielding (O2 < 50ppm), Precise Chamber Temperature Control

    • No Flux Cleaning, Suitable for Fine Pitch Flip Chip Bonding

  • High Flexibility
    HIGH FLEXIBILITY

    • Compatible with Both Flux Dipping and Fluxless Modes

    • Compatible with CoW / CoS / Panel

    • Compatible with Wafer / Tape & Reel / Tray Loading

    • Compatible with Face-up & Face-down modes

    • Single TCB / Dual TCBs / TCB-Vacuum Formic Acid Reflow System

ITEMSPECIFICATIONS
ApplicationsCoWoS, HBM
Die SizeUp to 26x33mm
Die Thickness≥25μm
Bond Force0.7-50N
Chip-StackingYes
ProcessFC, DA, 90°, Flux Dipping
UPHSingle TCB >500; Dual TCBs >1000 (Bond Time 4s)
ITEMSPECIFICATIONS
Material Handling12" Wafer, Substrate, Panel
Ejector SystemMulti-Zone Ejector System
MESSECS / GEM, Full Traceability
Tool ChangingAutomatic Nozzle and Ejector Change
Inspection SystemPBI / Particle & Die Crack Detect
Footprint (mm)3830x2270x2800 (LxDxH) Single TCB
Note: Specs may vary by material and configuration
NUERA PRO
Thermo-Compression Bonder - Fluxless
  • ±1μm

    Placement

  • 450+

    UPH

  • 16Hi+

    Stacking

  • 100

    Class

  • High Precision
    HIGH PRECISION

    • Placement Accuracy: TC ±1μm@3σ

    • Active Tilt Control: ≤2μm@10mm

    • Compatible for TC-MUF, MR-MUF and FC Processes

  • High Throughput
    HIGH THROUGHPUT

    • Single TCB UPH >450, Dual TCB UPH >900 (TC Process Time 5s)

    • Fast Device Conversion in 4 hours

    • EFEM with Multi-loadports

  • Fluxless
    Fluxless

    • Low Temperature Atmospheric Plasma to Remove Metal Oxide

    • Wafer-level / Chip-level Plasma Treatment (Both Sides)

    • N2 Shielding (O2 < 100ppm), Precise Chamber Temperature Control

    • No Flux Cleaning, Suitable for Fine Pitch Flip Chip Bonding

  • High Flexibility
    HIGH FLEXIBILITY

    • Compatible with Both Flux Dipping and Fluxless Modes

    • Compatible with CoW / CoS / Panel

    • Compatible with Wafer / Tape & Reel / Tray Loading

    • Compatible with Face-up & Face-down modes

    • Single TCB / Dual TCBs / TCB-Vacuum Formic Acid Reflow System

ITEMSPECIFICATIONS
ApplicationsCoWoS, HBM
Die SizeUp to 26x33mm
Die Thickness≥25μm
Bond Force0.7-50N
Chip-StackingYes
ProcessFC, DA, TC Fluxless, TC Flux Dipping
UPHSingle TCB >450; Dual TCBs >900 (TC Process Time 5s)
ITEMSPECIFICATIONS
Material Handling12" Wafer, Substrate, Panel
Ejector SystemMulti-Zone Ejector System
MESSECS / GEM, Full Traceability
Tool ChangingAutomatic Nozzle and Ejector Change
Inspection SystemPBI / Particle & Die Crack Detect
Footprint (mm)3830x2270x2800 (LxDxH) Single TCB
Note: Specs may vary by material and configuration
GEMINI PRO
Wafer Level Fan-out Bonder
  • ±2μm

    Placement

  • 500+

    UPH

  • 16Hi+

    Stacking

  • 100

    Class

  • High Precision
    HIGH PRECISION

    • Placement Accuracy: DA ±2μm@3σ

    • Tilt Control: ≤2μm over 10mm

    • Supports DAF face-up bonding process

  • High Throughput
    HIGH THROUGHPUT

    • Single TCB UPH > 500, Dual TCB UPH > 1000 with 4s Bond Time

    • Fast Device Conversion in 4 hours

    • EFEM with Multi-loadports

  • Multi-Die Bonding
    MULTI-DIE BONDING

    • Auto Change Collect & Ejector

    • DAF Thickness Down to 7.5μm

    • Particle & Die Crack & Coplanarity Detection

  • High Flexibility
    HIGH FLEXIBILITY

    • Compatible with CoW

    • Compatible with Wafer / Tape & Reel / Tray Loading

    • Single TCB / Dual TCBs

ITEMSPECIFICATIONS
ApplicationsVFO; CoWoS-L AB0
Die SizeUp to 26x33mm
Die Thickness≥25μm
Bond Force0.7-50N
Chip-StackingYes
ProcessDA
UPHSingle TCB >500; Dual TCBs >1000 (Bond Time 4s)
ITEMSPECIFICATIONS
Material Handling12" Wafer
Ejector SystemMulti-Zone Ejector System
MESSECS / GEM, Full Traceability
Tool ChangingAutomatic Nozzles and Ejector Change
Inspection SystemPBI / AOI / Particle / Coplanarity / Die Crack
Footprint (mm)3830x2270x2800 (LxDxH) Single TCB
Note: Specs may vary by material and configuration
Contact
  • Address: Building 9, Songshan Lake Industrialization Center,
    Alishan Road, Songshan Lake Park, Dongguan City,
    Guangdong Province
  • Tel: +65 9349 9866(Bert)

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